Black Phosphorus Radio-Frequency Transistors

Abstract

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

15 pages, 4 figures, supporting information

References in corpus (3)

• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• MoS2 Transistors Operating at Gigahertz Frequencies
• Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Cited by in corpus (17)

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• In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
• Ab initio study of electron-phonon interaction in phosphorene
• Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
• Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation
• Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
• Anisotropic Ripple Deformation in Phosphorene
• A New Phosphorus Allotrope with Direct Band Gap and High Mobility
• Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus
• Mid-infrared time-resolved photoconduction in black phosphorus
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge
• Valley-engineering mobilities in two-dimensional materials