Electrically tunable multiple Dirac cones in thin films of (LaO)2(SbSe2)2 family of materials
arXiv:1409.3641 · doi:10.1038/ncomms9517
Abstract
Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators due to its importance in both fundamental physics and device applications. The ability to control the properties of Dirac cones, such as bandgap and Fermi velocity, is essential for the occurrence of various new phenomena and the development of next-generation electronic devices. Based on first-principles calculations and an analytical effective model, we propose a new Dirac system with eight Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials with an external gate voltage. The advantage of this system lies in its tunability: the existence of gapless Dirac cones, their positions, Fermi velocities and anisotropy all can be controlled by an experimentally feasible gate voltage. We identify the layer dependent spin texture induced by spin-orbit coupling as the underlying physical reason for the tunability of Dirac cones in this system. As a consequence, we show that the electrically tunable quantum anomalous Hall effect with a high Chern number can be induced by introducing magnetization into this system.
22 pages, 17 figures
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Cited by in corpus (17)
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- Unconventional superconductivity in bilayer transition metal dichalcogenides
- Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe
- Material Development and Physical Properties of BiS2-Based Layered Compounds
- Direct evidence of hidden local spin polarization in a centrosymmetric superconductor LaOFBiS
- Polytypism in LaOBiS2-type compounds based on different three-dimensional stacking sequences of two-dimensional BiS2 layers
- Phonon helicity induced by electronic Berry curvature in Dirac materials
- Predicted electronic markers for polytypes of LaOBiS2 examined via angular resolved photoemission spectroscopy
- Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
- Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)
- Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal
- Spin texture in a bilayer high-temperature cuprate superconductor
- Microscopic model for the hidden Rashba effect in YBaCuO
- Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms
- Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdOFSbBiSe
- Pressure-induced superconductivity in layered pnictogen diselenide NdOFSbBiSe (x = 0.3 and 0.7)
- Intrinsic Mechanism for Magneto-Thermal Conductivity Oscillations in Spin-Orbit-Coupled Nodal Superconductors