An accurate single-electron pump based on a highly tunable silicon quantum dot

Abstract

Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of non-adiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.

12 pages, 7 figures, includes supplementary information, Nano Letters (2014)

References in corpus (4)

• A single-atom electron spin qubit in silicon
• Single-parameter non-adiabatic quantized charge pumping
• Single-parameter quantized charge pumping in high magnetic fields
• Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field

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