76 citations · 363 across the 27 of their papers we have counts for
27 papers
Many-body symmetry-protected zero boundary modes of synthetic photo-magnonic crystals
Alan Gardin, Emilio Cobanera, Giuseppe C. Tettamanzi
The topological classification of insulators and superconductors, the "ten-fold way", is grounded on fermionic many-body symmetries and has had a dramatic impact on many fields of…
Synthetic area spread in two-dimensional arrays of superconducting quantum interference filters
Ross D. Monaghan, Jonathan L. Marenkovic, Giuseppe C. Tettamanzi
Superconducting Quantum Interference Devices (SQUIDs), formed by incorporating Josephson junctions into loops of superconducting material, are the backbone of many modern quantum s…
Highly-Linear Proximity-Based Bi-SQUID Operating above 4 K
G. Trupiano, E. Riccardi, C. Puglia +5
We demonstrate a highly linear superconducting quantum interference device (SQUID) amplifier based on a double-loop (Bi-SQUID) architecture incorporating three superconductor-norma…
Level attraction from interference in two-tone driving
Alan Gardin, Guillaume Bourcin, Christian Person +5
Coherent and dissipative couplings, respectively characterised by energy level repulsion and attraction, each have different applications for quantum information processing. Thus,…
The role of Rashba spin-orbit induced spin textures in the anomalous Josephson effect
Ross D. Monaghan, Giuseppe C. Tettamanzi
This work reports the theoretical investigation into the mechanism underpinning the anomalous Josephson effect. The prototypical system we study is a ballistic two-dimensional junc…
Engineering synthetic gauge fields through the coupling phases in cavity magnonics
Alan Gardin, Guillaume Bourcin, Jeremy Bourhill +5
Cavity magnonics, which studies the interaction of light with magnetic systems in a cavity, is a promising platform for quantum transducers and quantum memories. At microwave frequ…
Circuit-theoretic phenomenological model of an electrostatic gate-controlled bi-SQUID
Thomas X. Kong, Jace Cruddas, Jonathan Marenkovic +4
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic…
Manifestation of the coupling phase in microwave cavity magnonics
Alan Gardin, Jeremy Bourhill, Vincent Vlaminck +4
The interaction between microwave photons and magnons is well understood and originates from the Zeeman coupling between spins and a magnetic field. Interestingly, the magnon/photo…
Ultra-Highly Linear Magnetic Flux-to-Voltage response in Proximity-based Mesoscopic bi-SQUIDs
Giorgio De Simoni, Lorenzo Cassola, Nadia Ligato +2
Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response…
Non-adiabatic quantum control of valley states in silicon
Alan Gardin, Ross D. Monaghan, Tyler Whittaker +2
Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable a…
Bioadhesive Graft-Antenna for Stimulation and Repair of Peripheral Nerves
Ashour Sliow, Zhi Ma, Gaetano Gargiulo +12
Peripheral nerve injuries are difficult to treat due to limited axon regeneration; brief electrical stimulation of injured nerves is an emerging therapy that can relieve pain and e…
Gigahertz Single-Electron Pumping Mediated by Parasitic States
A. Rossi, J. Klochan, J. Timoshenko +6
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of th…
Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House +3
The ability to apply GHz frequencies to control the quantum state of a single atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based…
Dynamics of a single-atom electron pump
J. van der Heijden, G. C. Tettamanzi, S. Rogge
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electro…
A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Wendy E. Purches, Alessandro Rossi, Ruichen Zhao +5
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experim…
An accurate single-electron pump based on a highly tunable silicon quantum dot
A. Rossi, T. Tanttu, K. Y. Tan +7
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Her…
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Enrico Prati, Marco De Michielis, Matteo Belli +14
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…
New tools for the direct characterisation of FinFETs
G. C. Tettamanzi, A. Paul, S. Lee +2
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechan…
Dopant metrology in advanced FinFETs
G. P. Lansbergen, R. Rahman, G. C. Tettamanzi +4
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of e…
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R. Rahman, G. P. Lansbergen, J. Verduijn +7
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experim…
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Abhijeet Paul, Giuseppe C. Tettamanzi, Sunhee Lee +5
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretica…
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…
Lifetime enhanced transport in silicon due to spin and valley blockade
G. P. Lansbergen, R. Rahman, J. Verduijn +6
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silico…
Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen +6
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the ch…