Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Abstract

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

5 pages, 5 figures

References in corpus (8)

• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Charge transfer between epitaxial graphene and silicon carbide
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• Transport gap in side-gated graphene constrictions
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Cited by in corpus (6)

• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
• Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC