Spontaneous Strains and Gap in Graphene on Boron Nitride
arXiv:1404.7777 · doi:10.1103/PhysRevB.90.075428
Abstract
The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an average gap in the electronic spectrum of graphene. We present a simple, but realistic model, by which the displacements, strains and spectral gap can be derived analytically from the adhesion forces between hBN and graphene. When the lattice axes of graphene and the substrate are aligned, strains reach a value of order 2\%, leading to effective magnetic fields above 100T. The combination of strains and induced scalar potential gives a sizeable contribution to the electronic gap. Commensuration effects are negligible, due to the large stiffness of graphene.
8 pages, 11 figures. Expanded stability analysis, fixed references
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- Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN
- Interlayer interaction in general incommensurate atomic layers
- Moiré band model and band gaps of graphene on hexagonal boron nitride
- Superlattices based on van der Waals 2D materials
- Electronic structure of spontaneously strained graphene on hexagonal Boron Nitride
- Pseudomagnetic fields in graphene nanobubbles of constrained geometry: A molecular dynamics study
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- Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES
- Valley Order and Loop Currents in Graphene on Hexagonal Boron Nitride
- Interaction-induced metallic state in graphene on hexagonal boron nitride