Radio frequency occupancy state control of a single nanowire quantum dot

Abstract

The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

arXiv commentRevised manuscript, 12 pages, submitted to J. Phys. D as a contribution in a Special Issue on Nanowires

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• Large and uniform optical emission shifts in quantum dots externally strained along their growth axis
• Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
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• Heterogeneous integration of superconducting thin films and epitaxial semiconductor heterostructures with Lithium Niobate
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