Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well
arXiv:1205.0924 · doi:10.1134/S0021364012110082
Abstract
We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numer- ical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilites limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.
5 pages - to appear in JETP Letters
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