activity
20102026
most citedDislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

137 citations · 579 across the 19 of their papers we have counts for

collaborators

20 papers

physics.app-ph2026

Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics

Hamidreza Esmaielpour, Leopold Rothmayer, Thomas Trinkl +5

Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay…

cond-mat.mes-hall2025★ 2 cited

Superconducting bistability in floating Al islands of hybrid Al/InAs nanowires

E. V. Shpagina, E. S. Tikhonov, D. Ruhstorfer +2

We investigate a non-equilibrium aspect of the current-driven superconducting-normal phase transition in floating Al islands of epitaxial full-shell Al/InAs nanowires. Within a tra…

cond-mat.mes-hall2024★ 7 cited

Interplay of Electron Trapping by Defect Midgap State and Quantum Confinement to Optimize Hot Carrier Effect in a Nanowire Structure

Imam Makhfudz, Hamidreza Esmaielpour, Yaser Hajati +2

Hot carrier effect, a phenomenon where charge carriers generated by photon absorption remain energetic by not losing much energy, has been one of the leading strategies in increasi…

cond-mat.mes-hall2021★ 5 cited

High-dimensional acousto-optoelectric correlation spectroscopy reveals coupled carrier dynamics in polytypic nanowires

Maximilian M. Sonner, Daniel Rudolph, Gregor Koblmüller +1

The authors combine acousto-optoelectric and multi-channel photon correlation spectroscopy to probe spatio-temporal carrier dynamics induced by a piezoelectric surface acoustic wav…

cond-mat.mes-hall2021★ 5 cited

Self-induced ultrafast electron-hole plasma temperature oscillations in nanowire lasers

Andreas Thurn, Jochen Bissinger, Stefan Meinecke +6

Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detail…

cond-mat.mtrl-sci2020

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Fabio del Giudice, Jonathan Becker, Claudio de Rose +6

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diamet…

cond-mat.mes-hall2018★ 13 cited

Noise insights into electronic transport

S. U. Piatrusha, L. V. Ginzburg, E. S. Tikhonov +6

Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as…

cond-mat.mtrl-sci2018★ 137 cited

Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

Bo Sun, Georg Haunschild, Carlos Polanco +4

Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g.,…

cond-mat.mes-hall2017★ 7 cited

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

A. V. Bubis, A. O. Denisov, S. U. Piatrusha +6

We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage…

cond-mat.mes-hall2016★ 21 cited

Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser

B. Mayer, A. Regler, S. Sterzl +6

The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. Howev…

cond-mat.mes-hall2015★ 45 cited

Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires

Nadine Erhard, Stefan Zenger, Stefanie Morkötter +8

We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation o…

cond-mat.mes-hall2015★ 30 cited

Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction

Andreas Brenneis, Jan Overbeck, Julian Treu +7

We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microsc…

cond-mat.mes-hall2014★ 77 cited

Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires

Matthias Weiß, Jörg B. Kinzel, Florian J. R. Schülein +10

We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7A…

cond-mat.mes-hall2014★ 58 cited

Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves

Jörg B. Kinzel, Daniel Rudolph, Max Bichler +5

We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a p…

cond-mat.mes-hall2014★ 34 cited

Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO-GaAs hybrid

J. Pustiowski, K. Müller, M. Bichler +4

We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric fie…

cond-mat.mes-hall2014★ 24 cited

Radio frequency occupancy state control of a single nanowire quantum dot

Matthias Weiß, Florian J. R. Schülein, Jörg B. Kinzel +8

The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interfa…

cond-mat.mes-hall2013★ 46 cited

Acoustically regulated carrier injection into a single optically active quantum dot

Florian J. R. Schülein, Kai Müller, Max Bichler +4

We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acou…

cond-mat.mes-hall2012★ 29 cited

All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current

K. Müller, T. Kaldewey, R. Ripszam +6

The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter.…

cond-mat.mes-hall2012★ 16 cited

Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well

Florian J. R. Schülein, Jens Pustiowski, Kai Müller +5

We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modul…

cond-mat.mtrl-sci2010★ 23 cited

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

Floris Reurings, Filip Tuomisto, Chad S. Gallinat +2

The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted…