Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Abstract

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

arXiv comment9 pages

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Cited by in corpus (6)

• Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
• Multi-harmonic Quantum Dot Optomechanics in fused LiNbO${}_3$-(Al)GaAs hybrids
• Quantum dot optomechanics in suspended nanophononic strings
• Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures
• Control of single photon emitters in semiconductor nanowires by surface acoustic waves
• Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots