Electronic properties of delta-doped phosphorus layers in silicon and germanium

Abstract

The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio density functional theory models without sacrificing the accuracy of these methods. The computational efficiency of the TFD model provides improved scalability for large multi-atom simulations, such as of nanoelectronic devices that have experimental interest. We also present the first theoretically calculated electronic properties of a delta-doped phosphorus layer in germanium as an application of this TFD model.

arXiv comment11 pages, 7 figures

References in corpus (9)

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• High precision quantum control of single donor spins in silicon
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• Ultra-dense phosphorus in germanium delta-doped layers
• Direct band structure measurement of a buried two-dimensional electron gas
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• Effective mass theory of monolayer δ-doping in the high-density limit
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Cited by in corpus (5)

• Observation and origin of the $\Delta$-manifold in Si:P $\delta$-layers
• Conductivity and size quantization effects in semiconductor $\delta$-layer systems
• Analytic model of a multi-electron atom
• Electronic transport in Si:P delta-doped wires
• Electronic structure of boron and aluminum $\delta$-doped layers in silicon