14 citations · 41 across the 11 of their papers we have counts for
11 papers
Antidot superlattices in two-dimensional topological insulators
Haolin Huang, Jackson S. Smith, Fabio Taddei +2
We investigate the electronic properties of a two-dimensional topological insulator patterned with an array of circular holes. The band structures of the topological insulator supe…
Transverse magnetic focusing in two-dimensional hole gases
Yik K. Lee, Jackson S. Smith, Hong Liu +4
Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with…
Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires
T. C. Bartolo, J. S. Smith, Yannick Schön +5
Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process. We use a combination o…
Influence of device geometry and imperfections on the interpretation of transverse magnetic focusing experiments
Yik K. Lee, Jackson S. Smith, Jared H. Cole
Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices. Transverse magnetic foc…
Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth
Qile Li, Jackson S. Smith, Yuefeng Yin +4
With its monoelemental composition, various crystalline forms and an inherently strong spin-orbit coupling, bismuth has been regarded as an ideal prototype material to expand our u…
An Ab Initio Description of the Mott Metal-Insulator Transition of M Vanadium Dioxide
Jamie M. Booth, Daniel W. Drumm, Phil S. Casey +3
Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M vanadium dioxi…
Ab initio calculation of energy levels for phosphorus donors in silicon
J. S. Smith, A. Budi, M. C. Per +5
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…
Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide
Jamie M Booth, Daniel W. Drumm, Phil S. Casey +3
Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic m…
Hubbard Physics in the PAW GW Approximation
Jamie M. Booth, Daniel W. Drumm, Phil S. Casey +2
It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projec…
The interplay between the structural and magnetic properties of vanadium dioxide from first principles
Jamie Booth, Daniel Drumm, Phil Casey +2
The effects of the spin and lattice degrees of freedom on the electronic structure of M1 vanadium dioxide are explored using a quasiparticle description. Contraction of the inter-v…
Electronic properties of delta-doped phosphorus layers in silicon and germanium
Jackson S. Smith, Jared H. Cole, Salvy P. Russo
The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This s…