Magnetic instability induced by Rh-doping in Kondo semiconductor CeRuAl
arXiv:1308.3285 · doi:10.1103/PhysRevB.88.115206
Abstract
Magnetic ground state of Rh-doped Kondo semiconductor CeRuAl [Ce(RuRh)Al] is investigated by muon-spin relaxation method. Muon-spin precession with two frequencies is observed in the = 0 sample, while only one frequency is present in the = 0.05 and 0.1 samples, which is attributed to the broad static field distribution at the muon site. The internal field at the muon site is enhanced from about 180 G in = 0 sample to about 800 G in the Rh-doped samples, supporting the spin-flop transition as suggested by macroscopic measurements, and the boundary of different magnetic ground states is identified around = 0.03. The drastic change of magnetic ground state by a small amount of Rh-doping (3%) indicates that the magnetic structure in CeRuAl is not robust and can be easily tuned by external perturbations such as electron doping. The anomalous temperature dependence of internal field in CeRuAl is suggested to be attributed to the hyperfine interaction between muons and conduction electrons.
8 pages, 8 figures, 1 table
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