Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy

Abstract

The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calculations allowed to accurately describe the HAXPES data despite the presence of strong plasmon excitations in the spectra. The configuration interaction parameters obtained from this analysis -- in particular the hybridization strength V_eff and the effective f binding energy Delta_f -- indicate a slightly stronger exchange interaction in CeOs2Al10 compared to CeRu2Al10, and a significant increase in CeFe2Al10. This verifies the coexistence of a substantial amount of Kondo screening with magnetic order and places the entire CeM2Al10 family in the region of strong exchange interactions.

arXiv comment9 pages, 4 figures, submitted to Physical Review B

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Cited by in corpus (9)

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• Quantitative study of the f occupation in CeMIn5 and other cerium compounds with hard x-rays
• Isoelectronic tuning of heavy fermion systems: Proposal to synthesize Ce3Sb4Pd3
• Antiferromagnetic correlations in strongly valence fluctuating CeIrSn
• Intermediate valence in single crystalline Yb${}_2$Si${}_2$Al
• Ce 3$p$ hard x-ray photoelectron spectroscopy study of the topological Kondo insulator CeRu${}_4$Sn${}_6$
• Quantitative investigation of the 4$f$ occupation in the quasikagome Kondo lattice CeRh${}_{1-x}$Pd${}_x$Sn
• Tuning the hybridization and magnetic ground state of electron and hole doped CeOs${}_2$Al${}_{10}$: an x-ray spectroscopy study
• The Kondo effect in ferromagnetic quantum critical CeRh${}_6$Ge${}_4$