Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10
arXiv:1005.4174 · doi:10.1103/PhysRevLett.106.056404
Abstract
We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOsAl across an anomalous antiferromagnetic ordering temperature () of 29 K, using optical conductivity spectra. The spectra along the - and -axes indicate that a - hybridization gap emerges from a higher temperature continuously across . Along the b-axis, on the other hand, a different energy gap with a peak at 20 meV appears below 39 K, which is higher temperature than , because of structural distortion. The onset of the energy gap becomes visible below . Our observation reveals that the electronic structure as well as the energy gap opening along the b-axis due to the structural distortion induces antiferromagnetic ordering below .
4 pages, 4 figures
References in corpus (6)
- Novel phase transition and the pressure effect in YbFe2Al10-type CeT2Al10 (T=Fe, Ru, Os)
- Semimetal to semimetal charge density wave transition in 1T-TiSe
- Long-range magnetic order in CeRu2Al10 evidenced by muSR and neutron diffraction
- Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10
- Long-range order and low-energy magnetic excitations in CeRu2Al10
- Origin of Middle-Infrared Peaks in Cerium Compounds
Cited by in corpus (23)
- Crystal-field ground state of the orthorhombic Kondo insulator CeRu2Al10
- Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10
- Anisotropic spin-dynamics in the Kondo semiconductor CeRu2Al10
- Anisotropic Electronic Structure of the Kondo Semiconductor CeFe2Al10 Studied by Optical Conductivity
- Infrared and Terahertz Spectroscopy of Strongly Correlated Electron Systems under Extreme Conditions
- High-field magnetization and magnetic phase transition in CeOs2Al10
- muSR and inelastic neutron scattering investigations of the caged type Kondo semimetals: CeT2Al10 (T=Fe, Ru and Os)
- Another dimension: investigations of molecular magnetism using muon-spin relaxation
- Competing 4f-electron dynamics in Ce(Ru1-xFex)2Al10 (x=0 to 1): magnetic ordering emerging from the Kondo semiconducting state
- Change of magnetic ground state by light electron-doping in CeOs2Al10
- Suppression of antiferromagnetic order and hybridization gap by electron- and hole-doping in the Kondo semiconductor CeOsAl
- Magnetic ordering with reduced cerium moments in hole-doped CeOs2Al10
- Electronic Structures of CeM2Al10 (M = Fe, Ru, and Os) Studied by Soft X-ray Resonant and High-Resolution Photoemission Spectroscopies
- Contrasting electron and hole doping effects on the spin gap of the caged type Kondo semimetal CeOsAl: A muon spin relaxation and inelastic neutron scattering investigation
- Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy
- Anomalous change of the magnetic moment direction by hole doping in CeRuAl
- Relation between - hybridization and magnetic ordering in CeRuAl: An optical conductivity study of Ce(RuRh)Al ()
- Observation of Electronic Structure Modification in the Hidden Order Phase of CeCoSi
- High temperature antiferromagnetism in Yb based heavy fermion systems proximate to a Kondo insulator
- Optical and photoelectrical studies on anisotropic metal-insulator transition of RuAs
- Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOsAl: An Optical Study with Re and Ir Substitution
- Tuning the hybridization and magnetic ground state of electron and hole doped CeOsAl: an x-ray spectroscopy study
- A crossover from Kondo semiconductor to metallic antiferromagnet with -electron doping in CeFeAl