Change of magnetic ground state by light electron-doping in CeOs2Al10

Abstract

The effect of Ir substitution for Os in CeOs2Al10, with an unusually high Neel temperature of T~28.5K, has been studied by high-resolution neutron diffraction and magnetization measurements. A small amount of Ir (~ 8%) results in a pronounced change of the magnetic structure of the Ce-sublattice. The new magnetic ground state is controlled by the single ion anisotropy and implies antiferromagnetic arrangement of the Ce-moments along the a-axis, as expected from the anisotropy of the paramagnetic susceptibility. The value of the ordered moments, 0.92(1) mu_B, is substantially bigger than in the undoped compound, whereas the transition temperature is reduced down to 21K. A comparison of the observed phenomena with the recently studied CeRu1.9Rh0.1Al10 system, exhibiting similar behaviour [A. Kondo et al., J. Phys. Soc. Jpn. 82, 054709 (2013)], strongly suggests the electron doping as the main origin of the ground state changes. This provides a new way of exploring the anomalous magnetic properties of the Ce(Ru/Os)2Al10 compounds.

References in corpus (4)

• Long-range order and low-energy magnetic excitations in CeRu2Al10
• Crystal-field ground state of the orthorhombic Kondo insulator CeRu2Al10
• Anisotropic spin-dynamics in the Kondo semiconductor CeRu2Al10
• Competing 4f-electron dynamics in Ce(Ru1-xFex)2Al10 (x=0 to 1): magnetic ordering emerging from the Kondo semiconducting state

Cited by in corpus (17)

• Another dimension: investigations of molecular magnetism using muon-spin relaxation
• muSR and inelastic neutron scattering investigations of the caged type Kondo semimetals: CeT2Al10 (T=Fe, Ru and Os)
• Suppression of antiferromagnetic order and hybridization gap by electron- and hole-doping in the Kondo semiconductor CeOs${}_2$Al${}_{10}$
• Kondo-lattice ferromagnets and their peculiar order along the magnetically hard axis
• Magnetic instability induced by Rh-doping in Kondo semiconductor CeRu${}_2$Al${}_{10}$
• Magnetic ordering with reduced cerium moments in hole-doped CeOs2Al10
• Electronic Structures of CeM2Al10 (M = Fe, Ru, and Os) Studied by Soft X-ray Resonant and High-Resolution Photoemission Spectroscopies
• Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy
• Contrasting electron and hole doping effects on the spin gap of the caged type Kondo semimetal CeOs${}_2$Al${}_{10}$: A muon spin relaxation and inelastic neutron scattering investigation
• Anomalous change of the magnetic moment direction by hole doping in CeRu${}_2$Al${}_{10}$
• Contrasting chemical pressure effect on the moment direction in the Kondo semiconductor CeT${}_2$Al${}_{10}$ (T = Ru,Os)
• Incommensurate spin-density-wave antiferromagnetism in CeRu${}_2$Al${}_2$B
• Incommensurate-Commensurate Magnetic Phase Transition in SmRu${}_2$Al${}_{10}$
• Temperature-Dependent Cycloidal Magnetic Structure in GdRu${}_2$Al${}_{10}$ Studied by Resonant X-ray Diffraction
• Effect of Nd and Rh substitution on the spin dynamics of Kondo insulator CeFe2Al10
• Tuning the hybridization and magnetic ground state of electron and hole doped CeOs${}_2$Al${}_{10}$: an x-ray spectroscopy study
• A crossover from Kondo semiconductor to metallic antiferromagnet with $5d$-electron doping in CeFe${}_2$Al${}_{10}$