Weak localization and Raman study of anisotropically etched graphene antidots
arXiv:1308.3111 · doi:10.1063/1.4824025
Abstract
We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot resolve the structure on the atomic scale. However, weak localization and Raman measurements - which both probe intervalley scattering at armchair edges - indicate that zigzag regions are enhanced compared to samples prepared with oxygen based reactive ion etching only.
arXiv comment5 pages, 6 figures, few references added in v2
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Cited by in corpus (18)
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- Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
- Nanostructured graphene for spintronics
- Anisotropic Etching of Graphite and Graphene in a Remote Hydrogen Plasma
- Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions
- Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
- Dirac model of electronic transport in graphene antidot barriers
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- Effects of disorder and contacts on transport through graphene nanoribbons
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- Gas adsorption effects on electronic and magnetic properties of triangular graphene antidot lattices
- Tuning proximity-induced spin-orbit coupling in graphene/WSe heterostructures