Statistical investigations on nitrogen-vacancy center creation

Abstract

Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for introducing NV- centers in the carbon matrix is ion implantation followed by annealing at 1100K. We investigated the influence of channeling effects during shallow implantation and statistical diffusion using molecular dynamics (MD) and Monte Carlo (MC) approaches. Energy barriers for the diffusion process were calculated using the density functional theory (DFT). Our simulations show a significant difference in the NV yield compared to the experiment. Statistically, 25% of the implanted nitrogens form a NV center after annealing.

5 pages, 6 figures

References in corpus (3)

• High sensitivity magnetic imaging using an array of spins in diamond
• Spin Properties of Very Shallow Nitrogen Vacancy Defects in Diamond
• An upper limit on the lateral vacancy diffusion length in diamond

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