A fitting algorithm for optimizing ion implantation energies and fluences

Abstract

We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $\mu$m surface layers of ${}^{15}$N or vacancies (using ${}^4$He).

arXiv comment5 pages, 3 figures

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Cited by in corpus (4)

• Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
• Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
• Time-resolved diamond magnetic microscopy of superparamagnetic iron-oxide nanoparticles
• Efficient creation of shallow NV${}^{-}$ ensembles by high-angle ion implantation