Splitting of photo-luminescent emission from nitrogen-vacancy centers in diamond induced by ion-damage-induced stress
arXiv:1302.2539 · doi:10.1088/1367-2630/15/4/043027
Abstract
We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly distinguishable spectral components in the NV- emission develop over a range of 4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV- centers for ensemble quantum information protocols.
Submitted to "New Journal of Physics" (NJP/458519/PAP/133921): 30 pages, 12 figures, 2 tables, 61 references
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- Alignment of the Diamond Nitrogen Vacancy Center by Strain Engineering
- Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography
- Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond
- Room-temperature detection of single 20 nm super-paramagnetic nanoparticles with an imaging magnetometer
- An analytical model for the mechanical deformation of locally graphitized diamond
- Characterization of the recovery of mechanical properties of ion-implanted diamond after thermal annealing