Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum
arXiv:1302.2200 · doi:10.1103/PhysRevB.88.035417
Abstract
Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunnelling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.
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