Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors

Abstract

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.

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Cited by in corpus (3)

• High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
• Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
• Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix