Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
arXiv:1212.3846 · doi:10.1038/nphys2528
Abstract
The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer ν=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the ν=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the ν=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.
5 pages, 4 figures
References in corpus (14)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Boron nitride substrates for high-quality graphene electronics
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Nonlocal edge state transport in the quantum spin Hall state
- Spin Filtered Edge States and Quantum Hall Effect in Graphene
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Quantum Anomalous Hall State in Bilayer Graphene
- Low density ferromagnetism in biased bilayer graphene
- Intra-Landau level Cyclotron Resonance in Bilayer Graphene
- Competing Nematic, Anti-ferromagnetic and Spin-flux orders in the Ground State of Bilayer Graphene
- Edge excitations of the canted antiferromagnetic phase of the quantum Hall state in graphene: a simplified analysis
- Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field
- Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at in High Magnetic Fields
- Dynamics and phase diagram of the quantum Hall state in bilayer graphene
Cited by in corpus (21)
- Quantum field theory in a magnetic field: From quantum chromodynamics to graphene and Dirac semimetals
- Tunable Fractional Quantum Hall Phases in Bilayer Graphene
- Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
- Composite fermion duality for half-filled multicomponent Landau Levels
- SO(5) symmetry in the quantum Hall effect in graphene
- Spatially-indirect Exciton Condensate Phases in Double Bilayer Graphene
- Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction
- Distinct Competing Ordered ν=2 States in Bilayer Graphene
- Interacting multi-channel topological boundary modes in a quantum Hall valley system
- Metallic Phase and Temperature Dependence of the Quantum Hall State in Bilayer Graphene
- Robust helical edge transport at quantum Hall state
- Spin-Valley Coherent Phases of the Quantum Hall State in Bilayer Graphene
- Phase diagram of a graphene bilayer in the zero-energy Landau level
- Spontaneous Layer Polarization and Conducting Domain Walls in the Quantum Hall Regime of Bilayer Graphene
- Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene
- Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene
- Interacting topological phases in thin films of topological mirror Kondo insulators
- Ising quantum Hall ferromagnetism in Landau levels of bilayer graphene
- Broken symmetry states in bilayer graphene in electric and in-plane magnetic fields
- Field-induced insulating states in a graphene superlattice
- Quantum Parity Hall effect in ABA Graphene