Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Abstract

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.

16 pages, 3 figures, 1 table, submitted for publication

References in corpus (13)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
• Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
• Fermi surface topology and low-lying quasiparticle dynamics of parent Fe${}_{1+x}$Te/Se Superconductor by orbital-polarization resolved ARPES
• Three-Dimensional Topological Insulators in I-III-VI${}_2$ and II-IV-V${}_2$ Chalcopyrite Semiconductors
• Nonlinear optical probe of tunable surface electrons on a topological insulator
• Metallic surface electronic state in half-Heusler compounds RPtBi (R = Lu, Dy, Gd)
• Topological Insulators in Ternary Compounds with a Honeycomb Lattice