Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Abstract

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

as published

References in corpus (6)

• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Spinful Composite Fermions in a Negative Effective Field
• Direct measurements of the fractional quantum Hall effect gaps
• Spin-texture and magneto-roton excitations at nu=1/3
• Absorption in the fractional quantum Hall regime: trion dichroism and spin polarization
• Filling factor dependence of the fractional quantum Hall effect gap

Cited by in corpus (4)

• Spin-Polarization of Composite Fermions and Particle-Hole Symmetry Breaking
• Half-integer conductance plateau at the $\nu =2/3$ fractional quantum Hall state in a quantum point contact
• Determination of the Fermi Contour and Spin-polarization of $\nu =3/2$ Composite Fermions via Ballistic Commensurability Measurements
• Topological Protection in a Landau Flat Band at $\nu =7/11$, a Candidate Filling Factor for Unconventional Correlations