Small-signal amplifier based on single-layer MoS2

Abstract

In this Letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.

Submitted version of the manuscript

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Cited by in corpus (9)

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• Transition-metal dichalcogenide bilayers: switching materials for spin- and valleytronic applications
• Tunable thermoelectricity in monolayers of MoS${}_2$ and other group-VI dichalcogenides
• Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment
• Avalanche photodiodes based on MoS2/Si heterojunctions