Chemical reactivity imprint lithography on graphene: Controlling the substrate influence on electron transfer reactions
arXiv:1207.3369 · doi:10.1038/nchem.1421
Abstract
The chemical functionalization of graphene enables control over electronic properties and sensor recognition sites. However, its study is confounded by an unusually strong influence of the underlying substrate. In this paper, we show a stark difference in the rate of electron transfer chemistry with aryl diazonium salts on monolayer graphene supported on a broad range of substrates. Reactions proceed rapidly when graphene is on SiO_2 and Al_2O_3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces. The effect is contrary to expectations based on doping levels and can instead be described using a reactivity model accounting for substrate-induced electron-hole puddles in graphene. Raman spectroscopic mapping is used to characterize the effect of the substrates on graphene. Reactivity imprint lithography (RIL) is demonstrated as a technique for spatially patterning chemical groups on graphene by patterning the underlying substrate, and is applied to the covalent tethering of proteins on graphene.
25 pages, 6 figures
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Control of graphene's properties by reversible hydrogenation
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Suspended Graphene: a bridge to the Dirac point
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Charged Impurity Scattering in Graphene
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Interference effect on Raman spectrum of graphene on SiO_2/Si