Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots

Abstract

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of ${}^{29}$Si (natural or purified abundance), are investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation rates for zero and finite temperatures (100 mK), concluding that our findings for zero temperature remain qualitatively valid also for 100 mK. We confirm the same anisotropic switch of the axis of prolonged spin lifetime with varying detuning as recently predicted in GaAs. Conditions for possibly hyperfine-dominated relaxation are much more stringent in Si than in GaAs. For experimentally relevant regimes, the spin-orbit coupling, although weak, is the dominant contribution, yielding anisotropic relaxation rates of at least two order of magnitude lower than in GaAs.

11 pages, 10 figures

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Cited by in corpus (6)

• Spin relaxation anisotropy in a GaAs quantum dot
• Highly tunable exchange-only singlet-only qubit in a GaAs triple quantum dot
• Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures