Strain-tunable band gap in graphene/h-BN hetero-bilayer
arXiv:1204.2030 · doi:10.1016/j.jpcs.2012.02.010
Abstract
Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.
9 pages, 8 figures
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- Strain and Water Effects on the Electronic Structure and Chemical Activity of In-Plane Graphene/Silicene Heterostructure
- Structural and Electronic Properties of Graphene and Graphene-like Materials
- Strain-tunable band gap of a monolayer graphene analogue of ZnS monolayer
- Strain-tunable energy band parameters of graphene-like GaN