Structural and Electronic Properties of Graphene and Graphene-like Materials

Abstract

Using full potential density functional theory calculations we have investigated the structural and electronic properties of graphene and some other graphene-like materials, viz., monolayer of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. We hope, with the advancement of material synthesis techniques, some these new materials will be synthesized in the near future for potential applications in various nano-devices.

arXiv commentPresented in the 20th International Conference on Composites/Nano-Engineering (ICCE-20), 22-28 July 2012, Beijing, China. 2 pages, 2 figures

References in corpus (4)

• Strain-tunable band gap in graphene/h-BN hetero-bilayer
• Structural and Electronic Properties of Graphene and Silicene: An FP-(L)APW+lo Study
• Strain Tunable Band-gaps of Two-dimensional Hexagonal BN And AlN: An FP-(L)APW+lo Study
• A comparative computational study of the electronic properties of planar and buckled silicene

Cited by in corpus (2)

• Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain
• Graphene and Some of its Structural Analogues: Full-potential Density Functional Theory Calculations