Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

Abstract

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Quantum transport shows noisy-like behavior around the CNP at extremely high B fields. Surprisingly, when the diagonal conductivity σ_{xx} is plotted against the Hall conductivity σ_{xy}, a circular conductivity law is discovered, suggesting a chaotic quantum transport behavior.

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• Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
• Engineering quantum spin Hall insulators by strained-layer heterostructures
• Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
• Buried Dirac points in quantum spin Hall insulators: Implications for Majorana Kramers pair-based quantum computing