Precision quantization of Hall resistance in transferred graphene

Abstract

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.

References in corpus (5)

• Boron nitride substrates for high-quality graphene electronics
• Room-Temperature Quantum Hall Effect in Graphene
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
• Quantum resistance metrology in graphene
• Graphene on Gallium Arsenide: Engineering the visibility

Cited by in corpus (8)

• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
• Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate
• Towards a Graphene-Based Quantum Impedance Standard
• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
• Effect of piezoelectric substrate on phonon-drag thermopower in monolayer graphene
• Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices