Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation
arXiv:1111.2151 · doi:10.1016/j.nima.2012.01.054
Abstract
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
9 pages, 5 figures, submitted to Nuclear Instruments and Methods A
References in corpus (4)
- Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
- A Study of Monolithic CMOS Pixel Sensors Back-thinning and their Application for a Pixel Beam Telescope
- A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
- CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy
Cited by in corpus (4)
- R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
- Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
- X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX
- Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders