Multilayer graphene under vertical electric field

Abstract

We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) bandgap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite bandgap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum bandgap in the multilayer graphenes. Finally we compare our results with the experimental results of a field-effect-transistor.

10 page

References in corpus (12)

• The electronic properties of graphene
• Ultrahigh electron mobility in suspended graphene
• Suspended Graphene: a bridge to the Dirac point
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Electronic states and Landau levels in graphene stacks
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Dependence of band structures on stacking and field in layered graphene
• Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene