Localized States and Resultant Band Bending in Graphene Antidot Superlattices

Abstract

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

NanoLetters, 2011

References in corpus (15)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Graphene photodetectors for high-speed optical communications
• Carrier transport in 2D graphene layers
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Evidence of Klein tunneling in graphene p-n junctions
• Atomic Hole Doping of Graphene
• Raman imaging of doping domains in graphene on SiO2
• Robustness of edge states in graphene quantum dots
• Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping
• Polaronic signatures and spectral properties of graphene antidot lattices

Cited by in corpus (5)

• Electronic transport in disordered graphene antidot lattice devices
• Quantum Transport in Graphene Nanoribbons with Realistic Edges
• Plasmon-mediated Coulomb drag between graphene waveguides
• Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures
• Thermoelectric properties of disordered graphene antidot devices