Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
arXiv:1010.6144 · doi:10.1186/1556-276X-6-84
Abstract
Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically-designed GaAs quantum well comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin relaxation. D'yakonov-Perel' (DP) mechanism has been revealed to be the dominant contribution for spin relaxation in GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron Coulomb scattering. Our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin Bloch equation approach.
17 pages, 4 figures
References in corpus (8)
- Spin dynamics in semiconductors
- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
- Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and -type GaAs quantum wells from a fully microscopic approach
- Effect of electron-electron scattering on spin dephasing in a high-mobility low-density twodimensional electron gas
- Density dependence of spin relaxation in GaAs quantum well at room temperature
- Comment on "Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature"
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