Heat Conduction across Monolayer and Few-Layer Graphenes

Abstract

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

22 pages, 4 figures, accepted for publication in Nano Letters (2010) This paper has been withdrawn by the authors upon request by Nano Letters. The paper will be available in Nano Letters very soon

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Doping graphene with metal contacts
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
• Electrical and Thermal Transport in Metallic Single-Wall Carbon Nanotubes on Insulating Substrates
• Imaging, simulation, and electrostatic control of power dissipation in graphene devices

Cited by in corpus (2)

• Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)