The 3D transport diagram of a triple quantum dot

Abstract

We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.

4.3 pages, 5 figures, 1 table. This second version contains expanded exprimental details and analysis sections

References in corpus (5)

• Electrically driven single electron spin resonance in a slanting Zeeman field
• Coherent electronic transfer in quantum dot systems using adiabatic passage
• An electrostatically defined serial triple quantum dot charged with few electrons
• All-electronic coherent population trapping in quantum dots
• Entanglement distillation by adiabatic passage in coupled quantum dots

Cited by in corpus (8)

• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
• Dephasing-assisted transport in linear triple quantum dots
• Spin-polarized currents in double and triple quantum dots driven by ac magnetic fields
• Coherent quantum ratchets driven by tunnel oscillations: Fluctuations and correlations
• Coherent Long-Range Thermoelectrics in Nonadiabatic Driven Quantum Systems
• Co-tunneling spin blockade observed in a three-terminal triple quantum dot
• A quantitative study of bias triangles presented in chemical potential space