Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

Abstract

The incorporation of Phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed for the first time in a diluted magnetic semiconductor. Combining Kerr microscopy, magnetometry and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga,Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As${}_{1-y}$P${}_y$ layers regarding domain wall pinning, an increase of the domain wall width parameter and of the effective Mn-Mn spin coupling. However, at constant Mn doping, no significant increase of this coupling is found with increasing P concentration in the investigated range.

References in corpus (3)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
• Field-Driven Domain-Wall Dynamics in GaMnAs Films with Perpendicular Anisotropy

Cited by in corpus (13)

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• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
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• Pinning of Domain Walls in thin Ferromagnetic Films
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• Field-induced domain wall propagation: beyond the one-dimensional model
• Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
• Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
• Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
• Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs
• Direct probing of band-structure Berry phase in diluted magnetic semiconductors
• Current Induced Fingering Instability in Magnetic Domain Walls
• Micromagnetic study of a feasibility of the magnetic anisotropy engineering in nano-structured epitaxial films of (III,Mn)V ferromagnetic semiconductors