Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Abstract

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

10 pages, 3 figures

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• Spectroscopic investigations of phonons in epitaxial graphene
• Imaging snake orbits at graphene n-p junctions
• Low-symmetry non-local transport in microstructured squares of delafossite metals
• Intermediate diffusive-ballistic electron conduction around mesoscopic defects in graphene