Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

Abstract

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.

Nano Letters (in press)

References in corpus (22)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Graphene Nano-Ribbon Electronics
• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
• A Graphene Field-Effect Device
• Self-passivating edge reconstructions of graphene
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Structure, Stability, Edge States and Aromaticity of Graphene Ribbons
• Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Epitaxial graphene transistors on SiC substrates
• Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
• Conductance quantization and transport gap in disordered graphene nanoribbons
• Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
• Adsorbate-limited conductivity of graphene
• Non-volatile switching in graphene field effect devices
• Electronic transport in locally gated graphene nanoconstrictions

Cited by in corpus (4)

• Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics
• Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering
• Growth, charge and thermal transport of flowered graphene
• Quantum transport in graphene nanoribbon networks: complexity reduction by a network decimation algorithm