Current-Induced Spin Polarization in Gallium Nitride
arXiv:0906.0785 · doi:10.1063/1.3194781
Abstract
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization (CISP) is observed in the material at temperatures of up to 200 K.
arXiv comment16 pages, 3 figures
References in corpus (5)
- Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases
- Current induced electron spin polarization in strained semiconductors
- Current-Induced Polarization and the Spin Hall Effect at Room Temperature
- Room temperature spin coherence in ZnO
- Spin orbit coupling in bulk ZnO and GaN
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- Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities
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