output
20072017
most citedMetal Oxide Resistive Memory using Graphene Edge Electrode

156 citations

5 papers

cond-mat.mes-hall2017★ 9 cited

Analytical results regarding electrostatic resonances of surface phonon/plasmon polaritons: separation of variables with a twist

R. C. Voicu, T. Sandu

The boundary integral equation method ascertains explicit relations between localized surface phonon and plasmon polariton resonances and the eigenvalues of its associated electros…

cs.ET2016★ 28 cited

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Haitong Li, Peng Huang, Bin Gao +3

Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is develo…

cond-mat.mes-hall2015★ 156 cited

Metal Oxide Resistive Memory using Graphene Edge Electrode

Seunghyun Lee, Joon Sohn, Zizhen Jiang +2

The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technol…

cond-mat.mtrl-sci2011★ 41 cited

Enhancing hole mobility in III-V semiconductors

Aneesh Nainani, Brian. R. Bennett, J. Brad Boos +2

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials.…

physics.bio-ph2007★ 27 cited

Effect of Electro-Diffusion Current Flow on Electrostatic Screening in Aqueous Pores

Yang Liu, Jon Sauer, Robert Dutton

A numerical study within the framework of the Poisson-Nernst-Planck equations is conducted to investigate electrostatic screening of charged bio-molecules within synthetic pores ha…