41 citations · 42 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2011★ 41 cited
Enhancing hole mobility in III-V semiconductors
Aneesh Nainani, Brian. R. Bennett, J. Brad Boos +2
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials.…
cond-mat.mes-hall2003★ 1 cited
Magnetotunneling Between Two-dimensional Electron Gases in InAs-AlSb-GaSb Heterostructures
Y. Lin, E. M. González, E. E. Mendez +3
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets o…