548 citations · 1.3k across the 17 of their papers we have counts for
17 papers
Efficiency Limit of Transition Metal Dichalcogenide Solar Cells
Koosha Nassiri Nazif, Frederick U. Nitta, Alwin Daus +2
Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorpti…
Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Joel Martis, Sandhya Susarla, Archith Rayabharam +15
Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spat…
Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
Alvin Tang, Aravindh Kumar, Marc Jaikissoon +3
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth tempera…
Low Resistance III-V Hetero-contacts to N-Ge
Junkyo Suh, Pranav Ramesh, Andrew C. Meng +6
We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity () of $5\times10^…
High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
Koosha Nassiri Nazif, Alwin Daus, Jiho Hong +13
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirabl…
Statistical Analysis of Contacts to Synthetic Monolayer MoS2
Aravindh Kumar, Alvin Tang, H. -S. Philip Wong +1
Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scali…
Low-threshold optically pumped lasing in highly strained Ge nanowires
Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme +11
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several…
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English, Gautam Shine, Vincent E. Dorgan +2
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts wit…
Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process
David S. Sukhdeo, Jan Petykiewicz, Shashank Gupta +6
We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by m…
Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities
Jan Petykiewicz, Donguk Nam, David S. Sukhdeo +5
A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light e…
Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser
David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +3
We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-t…
Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources
David S. Sukhdeo, Krishna C. Saraswat, Birendra +2
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we sho…
Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser
David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +2
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon a…
Theoretical Modeling for the Interaction of Tin alloying with N-Type Doping and Tensile Strain for GeSn Lasers
David S. Sukhdeo, Krishna C. Saraswat, Birendra +2
We investigate the interaction of tin alloying with tensile strain and n-type doping for improving the performance of a Ge-based laser for on-chip optical interconnects. Using a mo…
A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics
David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang +2
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a ch…
Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser
Donguk Nam, David Sukhdeo, Szu-Lin Cheng +5
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed t…
Enhancing hole mobility in III-V semiconductors
Aneesh Nainani, Brian. R. Bennett, J. Brad Boos +2
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials.…