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20112023
most citedImproved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

548 citations · 1.3k across the 17 of their papers we have counts for

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physics.optics2017★ 150 cited

Low-threshold optically pumped lasing in highly strained Ge nanowires

Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme +11

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several…

physics.optics2015★ 16 cited

Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process

David S. Sukhdeo, Jan Petykiewicz, Shashank Gupta +6

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by m…

physics.optics2015★ 91 cited

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Jan Petykiewicz, Donguk Nam, David S. Sukhdeo +5

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light e…

physics.optics2015★ 11 cited

Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser

David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +3

We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-t…

physics.optics2015★ 35 cited

Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources

David S. Sukhdeo, Krishna C. Saraswat, Birendra +2

We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we sho…

physics.optics2015★ 11 cited

Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser

David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat +2

We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon a…

physics.optics2014★ 1 cited

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang +2

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a ch…

physics.optics2012★ 81 cited

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

Donguk Nam, David Sukhdeo, Szu-Lin Cheng +5

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed t…