activity
20142022
most citedBrain-like associative learning using a nanoscale non-volatile phase change synaptic device array

210 citations · 1.1k across the 15 of their papers we have counts for

collaborators

15 papers

physics.app-ph2022★ 9 cited

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a Thermal Barrier

Raisul Islam, Shengjun Qin, Sanchit Deshmukh +7

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of…

cond-mat.mtrl-sci2021★ 6 cited

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Aravindh Kumar, Alvin Tang, H. -S. Philip Wong +1

Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scali…

cond-mat.mes-hall2021

Scaling Theory of Two-Dimensional Field Effect Transistors

Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…

cond-mat.mtrl-sci2019★ 46 cited

Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube

Stephanie M. Bohaichuk, Miguel Muñoz Rojo, Gregory Pitner +8

Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The t…

physics.app-ph2019★ 57 cited

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Christopher M. Neumann, Kye L. Okabe, Eilam Yalon +3

Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching powe…

cs.ET2018★ 3 cited

Hyperdimensional Computing Nanosystem

Abbas Rahimi, Tony F. Wu, Haitong Li +4

One viable solution for continuous reduction in energy-per-operation is to rethink functionality to cope with uncertainty by adopting computational approaches that are inherently r…

cond-mat.mtrl-sci2016★ 127 cited

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

Michal J. Mleczko, Runjie, Xu +6

Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crys…

cond-mat.mtrl-sci2016★ 70 cited

Picosecond electric-field-induced threshold switching in phase-change materials

Peter Zalden, Michael J. Shu, Frank Chen +16

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystalli…

cs.NE2015★ 75 cited

Device and System Level Design Considerations for Analog-Non-Volatile-Memory Based Neuromorphic Architectures

Sukru Burc Eryilmaz, Duygu Kuzum, Shimeng Yu +1

This paper gives an overview of recent progress in the brain inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design consider…

cs.ET2015★ 50 cited

Rapid Co-optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations

Gage Hills, Jie Zhang, Max Marcel Shulaker +5

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotube…

cs.AR2015★ 112 cited

TPAD: Hardware Trojan Prevention and Detection for Trusted Integrated Circuits

Tony F. Wu, Karthik Ganesan, Yunqing Alexander Hu +3

There are increasing concerns about possible malicious modifications of integrated circuits (ICs) used in critical applications. Such attacks are often referred to as hardware Troj…

cond-mat.mes-hall2015★ 163 cited

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Chi-Shuen Lee, Eric Pop, Aaron D. Franklin +2

We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunnelin…

cond-mat.mes-hall2015★ 156 cited

Metal Oxide Resistive Memory using Graphene Edge Electrode

Seunghyun Lee, Joon Sohn, Zizhen Jiang +2

The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technol…

cs.NE2014★ 210 cited

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Sukru Burc Eryilmaz, Duygu Kuzum, Rakesh Jeyasingh +4

Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nano…

cs.NE2014★ 41 cited

Experimental Demonstration of Array-level Learning with Phase Change Synaptic Devices

S. Burc Eryilmaz, Duygu Kuzum, Rakesh G. D. Jeyasingh +4

The computational performance of the biological brain has long attracted significant interest and has led to inspirations in operating principles, algorithms, and architectures for…