output
20092026
most citedPolariton Bose-Einstein condensate from a Bound State in the Continuum

206 citations

Showing physics.app-phShow all

8 papers · 1 filter

physics.app-ph2024★ 26 cited

Reversible single-pulse laser-induced phase change of SbS thin films: multi-physics modeling and experimental demonstrations

Capucine Laprais, Clément Zrounba, Julien Bouvier +12

Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to…

physics.app-ph2023★ 6 cited

Determination of compressive stress in thin films using micro-machined buckled membranes

C. Malhaire, M. Granata, D. Hofman +5

In this work, optical profilometry and finite-element simulations are applied on buckled micro-machined membranes for the stress analysis of ion-beam-sputtered $\mathrm{Ta_{2}O_{5}…

physics.app-ph2020★ 4 cited

Density-controlled growth of vertical InP nanowires on Si(111) substrates

Ali Jaffal, Philippe Regreny, Nicolas Chauvin +1

A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy…

physics.app-ph2020★ 156 cited

Single artificial atoms in silicon emitting at telecom wavelengths

W. Redjem, A. Durand, T. Herzig +15

Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…

physics.app-ph2019★ 86 cited

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet +5

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…

physics.app-ph2019★ 32 cited

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Ali Jaffal, Walid Redjem, Philippe Regreny +8

Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…

physics.app-ph2019★ 20 cited

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Yonatan Calahorra, Anke Husmann, Alice Bourdelain +6

Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potent…

physics.app-ph2018★ 23 cited

Interfacial thermal resistance between porous layers: impact on thermal conductivity of a multilayered porous structure

Pavlo Lishchuk, Anastasiya Dekret, Anton Pastushenko +5

Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si sub…