Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

V. A. Soltamov, B. V. Yavkin, D. O. Tolmachev +7

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S=3/2$ in rhomb…