134 citations · 612 across the 8 of their papers we have counts for
8 papers
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…
Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
V. A. Soltamov, C. Kasper, A. V. Poshakinskiy +7
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qu…
Spin and optical properties of silicon vacancies in silicon carbide (a review)
S. A. Tarasenko, A. V. Poshakinskiy, D. Simin +5
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which m…
All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
D. Simin, V. A. Soltamov, A. V. Poshakinskiy +10
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-SiC) and find extra terms in the spin Hamiltonian, originated from the trigon…
Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
V. A. Soltamov, B. V. Yavkin, D. O. Tolmachev +7
We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with in rhomb…